2D semiconductor structures as a basis for new high-tech devices (Review)

Apply

2D semiconductor structures as a basis for new high-tech devices (Review)

Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 4

Abstract

In this article, we present a short overview of the Ukrainian contribution into physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics together with some new results in this field. The possibility of creating “low-threshold” 2D lasers in Si 3 N 4 -GaAs and Al x Ga 1–x As-GaAs layered heterostructures, in which two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in details. It has been demonstrated that under the conditions of simultaneous co-existence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS 2 and WS 2 types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS 2 monolayer. It confirms the possibility to fabricate Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable to generate frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications.

Authors and Affiliations

D. V. Korbutyak

Keywords

Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures

The dynamical screening function of two-dimensional electron gas in a wide HgTe quantum well (QW) has been numerically modeled in this work. Calculations were performed in the Random Phase Approximation (RPA) framework a...

Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles

The influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range 101…106 Hz and at the tempera...

EP ID EP476626
DOI 10.15407/spqeo21.04.380
Views 102
Downloads 0