Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer

Journal Title: International Journal of Science and Research (IJSR) - Year 2015, Vol 4, Issue 2

Abstract

At low lattice temperature (

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  • EP ID EP356607
  • DOI -
  • Views 44
  • Downloads 0

How To Cite

(2015). Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer. International Journal of Science and Research (IJSR), 4(2), -. https://europub.co.uk./articles/-A-356607