Anisotropic Dry Etching (RIE) for Micro and Nanogap Fabrication
Journal Title: International Journal of Modern Engineering Research (IJMER) - Year 2012, Vol 2, Issue 1
Abstract
The main objective of this research is to develop a micro and nanogap structure using dry anisotropic etching –Reactive Ion Etching- RIE. Amorphous silicon material is used in the micro and nanogap structure and gold as electrode. The fabrication processes of the micro and nanostructure are based on conventional photolithography, wet etching for the Al pattern and wet etching for a-Si pattern using RIE process. Reactive ion etching (IP-RIE) has been applied and developed as essential method for etching micro and nanogap semiconductors.
Authors and Affiliations
Th. S. Dhahi, U. Hashim
Keywords
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