Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure
Journal Title: International Journal of Innovative Research in Computer Science and Technology - Year 2017, Vol 5, Issue 2
Abstract
Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties.
Authors and Affiliations
Ziwei Cui
Keywords
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- EP ID EP748478
- DOI 10.21276/ijircst.2017.5.2.3
- Views 62
- Downloads 0
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