Clusters of Atoms of Copper and Irridium and Their Influence on Recombination Properties of Silicon
Journal Title: International Journal of Multidisciplinary Research and Analysis - Year 2020, Vol 3, Issue 09
Abstract
The types and nature of structural defects of n-type silicon with clusters of impurity atoms of copper and iridium were determined by the method of non-stationary capacitive spectroscopy (DLTS), measurements of the resistivity, concentration and lifetime of charge carriers, as well as using infrared and atomic force microscopes Solver-NEXT. It was found that after hightemperature diffusion, star-shaped defects are observed in rapidly cooled Si <Cu> samples, while in rapidly cooled Si <Ir> samples they are subsequently embedded in a chain and in the form of a needle, and in both slowly cooled samples, only roundshaped inclusions are formed, however, the density is low. The absence of dislocation decoration in slowly cooled Si <Cu> and Si <Ir> samples is associated with the formation of point defects of the [Cu – O] type, [Cu – Si] silicides, and pairs of Cui [Cus – Cui] and Iri [Irs – Iri] atoms. An increase in the lifetime of charge carriers caused by the formation of an adhesion level associated with the [Cu – O] complex in silicon.
Authors and Affiliations
Sherzod Axmadovich Mahmudov, Johongir Zokirjonovich Mirzaraimov, Avaz Karimjonovich Rafikov
Keywords
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- EP ID EP689145
- DOI DOI: 10.47191/ijmra/v3-i9-04
- Views 221
- Downloads 0
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