Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 2
Abstract
The comparative analysis of optical characteristics inherent to TiO2/SiC and TiO2/por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of TiO2 layers with approximately the same width 60 nm takes place. In this case the TiO2 film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO2/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film.
Authors and Affiliations
Yu. Yu. Bacherikov
Keywords
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- EP ID EP416008
- DOI 10.15407/spqeo21.02.200
- Views 87
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