Computer-Aided Analysis for Device Modelling Of 45nm MOSFET
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2015, Vol 3, Issue 6
Abstract
The present scenario of the MOSFET device scaling has resulted in severe short channel effects and transport degradation. In addition, variability in deeply scaled transistor such as threshold voltage Vth variability has emerged as a major challenge for circuit and device design. MOSFETs with deeply retrograde channel profile requires higher and higher substrate doping’s to control short channel effects. The depletion width of the MOSFET scales down, the substrate doping that determines the threshold voltage and also controls the short channel effects. The design of the deeply retrograde channel MOSFET with the gate length of 45nm and the drain to source channel length of 32nm are designed. The device simulation is carried out using the energy balance model with SILVACO TCAD tool.The design of the MOSFET is determined by the characteristic of drain current, gate to source current input and output voltage of transistor are obtained using 1.2V using HSPICE software.The main novelties related to the 45nm technology such as gate oxide, metal gate, low interconnect dielectric are implemented in the MICROWIND tool and the characteristic of subthreshold swing, comparison of current and voltage are determined by layout simulation.
Authors and Affiliations
Susidra S, Thiruvalar Selvan P
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