Double Ionization of Silicon and Phosphorus by Electron-Impact

Journal Title: Bulletin of Pure and Applied Sciences Sec. D – Physics - Year 2018, Vol 37, Issue 2

Abstract

I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.

Authors and Affiliations

Santosh Kumar

Keywords

Related Articles

Comparative Study of the Entropy Change of Spinning Black Holes Due to Mass Change in XRBs and AGN

The present paper gives the comparative study of the entropy change of spinning black holes due to mass change in XRBs & AGN and concludes that the ratio of the entropy change in XRBs and AGN decreases with the increase...

Quantum Pumping of Charge and Spin Currents in Graphene Nano Ribbons

We have studied the case of nonmagnetic leads in which only part of the graphene nano ribbons is subjected to an ac gate voltage to break the left-right spatial symmetry. It was shown that peaks of the negative (positive...

Resonant Features in Bilayer Nanoribbons in a Single Mode Regime with a Short Range Defect

We have studied resonant features in bilayer nanoribbon in a single mode regime with a short range defect. We have found the effect of edge disorder on the transport properties of a graphene nanoribbons and bilayer graph...

Comparative Study of the Radiation Power of Black Holes Due to Non-Relativistic & Relativistic Effect

In the present research paper, we have proposed a model for ratio of the radiation power & relativistic radiation power using the Stephen-Boltzmann-Schwarzschild-Hawking radiation formula to apply the variation of mass...

Calculation of Spin Relaxation Rate of Iron Ion

The present paper discusses the spin relaxation process and calculates the spin relaxation rate of Iron ion (Fe+3). We also have discussed the variation of the spin relaxation rate with different low temperature and from...

Download PDF file
  • EP ID EP527651
  • DOI 10.5958/2320-3218.2018.00007.6
  • Views 156
  • Downloads 0

How To Cite

Santosh Kumar (2018). Double Ionization of Silicon and Phosphorus by Electron-Impact. Bulletin of Pure and Applied Sciences Sec. D – Physics, 37(2), 33-41. https://europub.co.uk./articles/-A-527651