Effect of Parasitic Inductance on Inverter Module Performance

Abstract

Effect of circuit parasitic inductance is an important consideration in application and characterization of Insulated Gate Bipolar Transistor Module (IGBT). Higher value of parasitic inductance causes higher voltage overshoot peak. This paper demonstrates how the performance of the half H-bridge IGBT inverter module is affected by it. Comparison of Vce(peak) values of IGBT modules having different Stray inductance is done for analysis purpose. Simulation results show the effectiveness of our approach.

Authors and Affiliations

Kathiriya Shrikantkumar Mithabhai, Vinod Patel

Keywords

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  • EP ID EP20604
  • DOI -
  • Views 301
  • Downloads 4

How To Cite

Kathiriya Shrikantkumar Mithabhai, Vinod Patel (2015). Effect of Parasitic Inductance on Inverter Module Performance. International Journal for Research in Applied Science and Engineering Technology (IJRASET), 3(5), -. https://europub.co.uk./articles/-A-20604