Effect of Point Defect in Carbon Nanotube (8.0) on the Molecular Electrostatic Potential distribution Near it Edge
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 3
Abstract
The influence of point defect on the electronic and spatial structure of carbon nanotubes (8.0) have been studied depending on the placement vacancies in the structure of nanotubes. On the basis of quantum-chemical calculations and using semi-empirical and ab initio approaches the maps of the distribution of molecular electrostatic potential were builds in the planes which are perpendicular to the main axis of the nanotubes. It is shown that defects such as vacancy, are placed outside the first hexagonal carbon belt no effect on the topology of the distribution of molecular electrostatic potential in the vicinity of the entrance to the carbon nanotube. Instead, reactivity of port’s atoms such nanotubes may determinated point defects of the vacancy type to be placed in first hexagonal belt.
Authors and Affiliations
A. M. Datsyuk
X-ray Photoelectron Spectroscopy Study of Electronic Structure of Graphene Nanosheets
Investigations of graphene nanosheets and oxidized graphene nanosheets were carried out using X-ray photoelectron spectroscopy. Scanning and transmission electron microscopy investigations were used in addition to X-ray...
Structure, Energy State and Electrokinetic Characteristics of Zr1+xCo1-xSb Solid Solution
The features of the crystal and electronic structures, electrokinetic and energy state characteristics of Zr1+xCo1-xSb semiconductor solid solution in the temperature range T = 80 ÷ 400 K were investigated. The mechanism...
Use of Multiple Linear Regression for the Prediction of Thermal Regime of Wells
Questions of prediction of the thermal regime of a well for the calculation of the drilling parameters have been discussed. Researches and publications have been analyzed, and it has been noted, that despite the fact tha...
Influence of the C4H6O6 Concentration in the (NH4)2Cr2O7 - HBr- C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors
The paper presents the results of experimental determination of the influence of the initial concentration of tartaric acid on the features of the chemical interaction of InAs, InSb, GaAs and GaSb with (NH4)2Cr2O7 - HBr-...
Design and Simulation Elements of Analytical Microsystem-on-Chip With the Structures "Silicon-on-Insulator"
In this paper the results of architecture development, layout designof analytical microsystem-on-chip with the structures "silicon-on-insulator" (SOI) and its elements schemotechnical computer simulation for determine th...