Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 1
Abstract
InSb wafers of n-type conductivity were annealed at 300, 370 and 400 °C for 30 min in an open tube system under flowing argon ambient. The conductivity type conversion are revealed for the first time in samples with the electron concentration ~1.0•1014 cm–3 for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples the spectral response exhibits pronounced increase in the short-wave region. The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of InSb antisites.
Authors and Affiliations
S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara
Keywords
Related Articles
- EP ID EP179324
- DOI 10.15407/spqeo20.01.105
- Views 84
- Downloads 0
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in -irradiated sam...
Physical mechanisms providing formation of ohmic contacts metal-semiconductor. Review
This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmi...
Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator
We have investigated the influence of the average radius and its dispersion of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption...
Macroscopic versus microscopic photovoltaic response of heterojunctions based on mechanochemically prepared nanopowders of kesterite and n-type semiconductors
Mechanochemically prepared nanopowder of selenium-free kesterite Cu2ZnSnS4 (CZTS) in combination with n-type semiconductors, i.e., CdS, ZnO and TiO2, was tested in planar and bulk-heterojunction solar cells. The samples...
Design and characterization of nanostructured SERS substrates based on gold nanostars
Using the method of chemical synthesis, effective SERS substrates were developed, which were the films of gold nanoparticles possessing the form of stars. The peculiarity of star-shaped nanoparticles is that they could e...