Effect of Thickness and Annealing Temperature on Optical Properties of CuIn1-xGaxSe2 (CIGS) Thin Films
Journal Title: International Journal of Modern Research In Engineering & Management. - Year 2018, Vol 1, Issue 1
Abstract
CuIn1-xGaxSe2(CIGS) thin films for x=0.3 with the thickness (500,1000) nm on glass substrate at ambient temperature have been prepared by thermal evaporation technique from four-component semiconductors alloy (CIGS) which obtained by the melt-quenching method. The effects of thickness and annealing temperature on structural and optical properties have been studied. The results showed that as the film thickness increases the crystallinity improves and the more improvement were observed with the increase in annealing temperature. The optical measurements revealed that most of the optical properties were significantly affected by the thickness and annealing temperature, the CIGS thin films conformed that all films have, direct allowed energy gap of (500 and 1000 ) nm thickness as prepared equal to ( 1.75 and 2.35 ) eV respectively. In addition, annealing of the thin films improves their band gap value to 2.59 eV for 500 nm to 2.44 eV for 1000 nm thin films. The values of some important optical parameters of the studied films such as (absorption coefficient, refractive index, extinction coefficient, and dielectric constant (real and imaginary parts) were determined and analyzed.
Authors and Affiliations
Najiba Abdullah Al- Hamadani
Keywords
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