Electrostatically Deformation Mechanism of Hydrogen Passivation of Electrically Active Centers in CdTe and Cd1-xZnxTe Semiconductors
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
The model of hydrogen passivation of electrically active centers in CdTe and Cd1-xZnxTe is proposed in the frame of electrostatically deformation model. It was determined that passivation effect is increased when the concentration of atomic hydrogen does not exceed the acceptor concentration NA(NHimg1.gifNA), while degree of passivation tends to zero for the case NHimg2.gifNA .
Authors and Affiliations
V. B. Brytan, R. M. Peleschak, A. А. Velchenko, I. P Kremer, Yu Ugrun
Keywords
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