Exploring Terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR Integrated Circuits: Advancements and Obstacles
Journal Title: International Journal of Multidisciplinary Research and Analysis - Year 2024, Vol 7, Issue 03
Abstract
The text provides a description of the characteristics of several NMOS and CMOS circuit approaches, as well as an explanation of the limitations associated with each technology. Next, the CMOS domino circuit, a novel form of circuit, is explained. This entails interconnecting dynamic CMOS gates in a manner that enables the activation of all gates in the circuit simultaneously using a single clock edge. Consequently, there is no need for intricate clocking methods, allowing the dynamic gate to operate at its maximum speed. This circuit features a basic mode voltage-controlled oscillator operating at 135 GHz in 80-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR, a 405 GHz push-push voltage controller in 38-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR with an on-chip patch antenna, a 128 GHz Schottky diode frequency doubler, a 170 GHz Schottky diode detector, a 600 GHz plasma wave detector in 122-nm COMPLEMENTARY METAL OXIDE SEMICONDUCTOR and a 40 GHz phase-locked loop with a frequency doubled output at 110 GHz. Given this and the trends in performance of n METAL OXIDE SEMICONDUCTOR transistors and Schottky diodes produced in complementary metal-oxide semiconductors, we lay out a plan for terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR systems and circuits, highlighting critical challenges that need to be addressed. With the advent of terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR
Authors and Affiliations
Abbas b NOORI
Keywords
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- EP ID EP732893
- DOI 10.47191/ijmra/v7-i03-46
- Views 70
- Downloads 0
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