FORMATION OF MULTICOMPONENT LAYERS IN THE SYSTEM In-Ga-As-P IN LIQUID PHASE EPITAXY
Journal Title: International scientific journal Science and Innovation - Year 2024, Vol 3, Issue 1
Abstract
The fabrication of semiconductor quantum electronic devices based on InP/GaInAsP heterostructures requires the growth of defect-free epitaxial layers. The growth of such epitaxial layers requires in-depth study and analysis of technological processes. This work demonstrates the possibility of growing epitaxial layers 〖In〗_x 〖Ga〗_(1-x) 〖As〗_y P_(1-y) with a density of threading dislocations not exceeding 〖10〗^5 и 〖10〗^6 〖sm〗^(-2), from a thin gap in liquid phase epitaxy. Using the example of a heterosystem 〖In〗_0,17 〖Ga〗_0,83 As/GaAs Various options for the formation of complex buffer layers necessary for the production of quantum electronics devices have been studied.
Authors and Affiliations
А. А. Alaev
Keywords
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- EP ID EP729929
- DOI 10.5281/zenodo.10478020
- Views 45
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