FORMATION OF THE MECHANISM OF PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL SEMICONDUCTOR IN PHOTODIODIC AND PHOTOVOLTATIC MODE
Journal Title: World Journal of Engineering Research and Technology - Year 2018, Vol 4, Issue 1
Abstract
In this paper, the results of a study of the photosensitivity mechanisms of two-barrier one and two basic structures based on gallium arsenide and silicon with a metal-semiconductor transition with different thicknesses of the base area is considered. The results of the analysis of the photodiode and photovoltaic mode of structures with metal-semiconductor barriers are presented on the basis of the obtained electrophysical characteristics.
Authors and Affiliations
Feruza Giyasova
Keywords
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