Improved Electrical Performances of An InP/ InGaAs Heterojunction Bipolar Transistor
Journal Title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) - Year 2017, Vol 12, Issue 3
Abstract
Bipolar Heterojunction Transistors (HBTs) have proved to be excellent devices for applications in microwave telecommunication systems. In this study, the aim is to optimize and to improve the InP / InGaAs HBT electrical performances. For this, we used the software TCAD-Silvaco (Technology Computer-Aided Design) which allows the simulation of the electrical and physical behavior of electronic components. We worked with the interactive tool DeckBuild to define the simulation program, and we used the device structure editor DevEDIT to design the InP/InGaAs HBT according to its technological characteristics (dimension, doping, meshing ...), and also the device simulator ATLAS which enables the electrical characterization of the semiconductor component HBT. Afterwards, we defined an appropriate topology taking into account physical models among them we cite SRH, BGN…, then we investigated the impact of the base width and the emitter length of the InP/ InGaAs HBT on its electrical performances and in particular in terms of the HBT characteristic parameters, such as the static current gain. Consequently, the results obtained allowed us to define an optimal structure of the component adapted for very high frequency applications in the microwave domain.
Authors and Affiliations
Jihane Ouchrif, Abdennaceur Baghdad, Aicha Sahel, Abdelmajid Badri, Abdelhakim Ballouk
Keywords
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- EP ID EP387335
- DOI 10.9790/1676-1203055359.
- Views 150
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