Influence of CuxTe back contact on CdS/CdTe photovoltaic device
Journal Title: Science Paper Online - Year 2009, Vol 4, Issue 4
Abstract
CuxTe polycrystalline thin films were prepared by co-evaporation method. The influence of the film characteristic on the CdS/CdTe photovoltaic device performance was investigated by XRD. The results show that as deposited CuxTe thin films were amorphous phase. While after annealing, samples were polycrystalline phases with increasing temperature. Especially, when NCu∶NTe was 1∶1.44 the film showed more evident polycrystalline phase and the crystallization degree increased. When the main CuTe phase structure was used as the back contact layer of CdTe solar cells, the characteristic of the device did not be improved and conversion efficiency (η) decreased. On the contrary, when the main Cu1.44Te phase structure was used as the back contact layer, η increased. Especially, when the thickness of the film was 40 nm, η was the biggest. Compared with the back contact layer of Cu1.44Te phase structure，the back contact layer of Cu2Te phase structure made the characteristic of CdTe solar cells decreased a little, but better than that without back contact layer.
Authors and Affiliations
Huijin Song, Jiagui Zheng, Lianghuan Feng
Keywords
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