PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR
Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 2
Abstract
The physical and technological criteria are presented for providing to the junction field-effect transistor sensitivity to external influences. It is shown that in the channel depletion mode by drain-gate voltage photosensitivity of drain-gate junction or temperature sensitivity of pinch-off voltage are greater than in the other modes.
Authors and Affiliations
Karimov A. V.
Keywords
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- EP ID EP657538
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