PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR

Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 2

Abstract

The physical and technological criteria are presented for providing to the junction field-effect transistor sensitivity to external influences. It is shown that in the channel depletion mode by drain-gate voltage photosensitivity of drain-gate junction or temperature sensitivity of pinch-off voltage are greater than in the other modes.

Authors and Affiliations

Karimov A. V.

Keywords

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  • EP ID EP657538
  • DOI -
  • Views 169
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How To Cite

Karimov A. V. (2017). PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR. World Journal of Engineering Research and Technology, 3(2), 57-63. https://europub.co.uk./articles/-A-657538