PHYSICS OF NANOTRANSISTORS: MOSFET THEORY IN TRADITIONAL APPROACH, ZERO LEVEL VIRTUAL SOURCE MODEL, AND DEPLETION APPROXIMATION
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2019, Vol 16, Issue 1
Abstract
In the second one from the line our new tutorial reviews, directed to serve students, university teachers and researchers, the traditional theory of MOSFET is discussed. Only the most significant ideas of the traditional approach, which also received the label of “top – down”, are discussed. In particular, we shall confine ourselves to simulating only the linear region and the saturation region of the current-voltage characteristics and at the same time show that the essential features of the traditional approach are quite acceptable and can serve as a starting point in the development of a completely different physical picture of processes in the nanotransistors. The traditional MOSFET model was rewritten in a form close to the virtual source model. The application of this improved model to modern nanotransistors was surprisingly successful, which is a consequence of taking into account MOS electrostatics through such an important factor as controlling the height of the barrier between the source and the channel from the gate side. The weakest point of this model is the description of electron transport, because it is based on the use of such concepts as mobility and saturation speed. That is why these two metrics were chosen as fitting parameters in order to fit into the experimental data for the output characteristics. Next, we return to a deeper examination of MOS electrostatics and show how to describe the subthreshold and above-threshold regions as correctly as possible, resulting in an improved model of the virtual source, however, the mobility and saturation speed will nevertheless remain fitting parameters. After that, we will physically more correctly describe the transport of electrons taking into account the possibility of ballistic transport and finally describe a virtual source model adequate to modern nanotransistors with a conduction channel length of 10 nm order.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP670116
- DOI 10.18524/1815-7459.2019.1.159485
- Views 79
- Downloads 0
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