Polysilicon and Metal-Gated N-Channel Grounded Si Mosfets As Devices To Characterise MIS Structures By The BOEMDET Technique
Journal Title: IOSR Journal of Applied Physics (IOSR-JAP) - Year 2018, Vol 10, Issue 6
Abstract
The Si/SiO2/poly-Si and Si/SiN/Al MIS structures have been characterized by biasing the FETs in strong inversion at Fowler-Nordheim (FN) fields. The gate tunnelling electron current and the substrate hole current due to anode hole injection over the anode barrier versus gate voltage characteristics of the FETs are used for this characterisation. The conduction band offset (CBO) and the valence band offset (VBO) determined for the Si/SiO2/poly-Si device are 3.2 eV and 4.6 eV. The bandgap of the oxide is found to be 8.9 eV, and the electron and hole effective mases in the oxide are determined to be 0.42m and 0.58m respectively. The CBO and VBO of the Si/SiN/Al device are found to be 1.7 eV and 2.3 eV respectively, the bandgap of SiN is 5.1 eV, and the electron and hole effective masses in SiN are 0.44m and 0.56m, where m is the free electron mass. These values are correct to one decimal place for the offsets and bandgap and two decimal places for the effective masses.
Authors and Affiliations
Dr. R. K. Chanana
Keywords
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- DOI 10.9790/4861-1006025057.
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