PYSICAL AND CHEMICAL PROPERTIES THIN FILMS ZnO-In-O

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PYSICAL AND CHEMICAL PROPERTIES THIN FILMS ZnO-In-O

Journal Title: Proceedings of Electrotechnical Institute Prace Instytutu Elektrotechniki - Year 2012, Vol 59, Issue 259

Abstract

The paper presents the results of the electrical properties of the oxide layers Zn-In-O. These layers were obtained by pulsed magnetron sputtering of metallic targetu composition by weight 80% Zn – 20% In the presents of pure argon. The influence of group frequency on the chemical composition and microstructure of the obtained layers. Frequency group varied from 50 Hz to 4.5 KHz. Working gas pressere was set at 1.3 Pa and the power of a dedicated process on the electroce sputtering at 200 W. Oxaide layers for microscopic examination was applied to a gass substrate CORNING, and electrical testing on glass substrates coated with a coductive layer of tin oxide and indium (ITO). Studies of bone resorption and absorption currents have shown that i the layers is the electric charge introdiuced during the sputtering process. It was also influenced by the frequencey of group on the chemical composition of the layers obtained. I was shown that an increase in the frequencey of group increases the number and size of cluster of large numbers of indium matal.

Authors and Affiliations

Jan ZIAJA

Keywords

EP ID EP187593
DOI -
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