Simulation Study of Various Layers and Double δ-Doping Effect on Device Performance of InAlAs/InGaAs/InP HEMT
Journal Title: Journal of New technology and Materials - Year 2017, Vol 7, Issue 1
Abstract
The InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor) lattice matched to InP offers outstanding high frequency, low noise operation for low-noise amplifiers. In this work, efforts have been made to study and optimize the device performance of 0.5 μm gate length double δ-doped InP-based In0.53Ga0.47As/In0.52Al0.48As HEMT with the help of the variation of various parameters like δ-doping, Schottky layer thickness, spacer layer thickness and gate length. To study the impact of various parameters we use Atlas Silvaco TCAD numerical simulation tool. We have performed characterization studies of two-dimensional electron gas (2DEG) in the channel layer, conduction band discontinuity (〖∆E〗_C), transconductance 〖(g〗_m), threshold voltage 〖(V〗_th)and cut-off frequency 〖(f〗_T) to optimize the device performance. And hence optimize figure of merit such as transconductance and cut-off the frequency of the device.
Authors and Affiliations
A. B. Khan, S. G. Anjum, M. J. Siddiqui
Keywords
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