slugDesign and Analysis of Three Stages pHEMT LNA At K-Band
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2014, Vol 2, Issue 6
Abstract
Thispaper represents the designing of three stage LNA using EC2612 pHEMT technology.pHEMT technology gives high transconductance and shows better reliability. This three stage amplifier has been designed for K-band applications. The GaAlAs LNA is suitable for transceiver front end due to the low input output VSWR, high stability and redundancy. The LNA is designed at 21GHz using distributed parameters and over RT duroid (εr= 2.2). This structure is simulatedand fabricated using ADS software. The simulated result shows the minimum noise figure of 1.09dB and a maximum gain of 25dB. Here tuning is done for gain flatness and +_ 0.5dB gain flatness is achieved for the range of 20-22GHz. Hence, the simulated and fabricated results are in good agreement.
Authors and Affiliations
Swati Sharma (ECE Department), Dr. Ashok Mittal, SeniorMember(IEEE), Mrs. Meena Mishra (Scientist F), Mr. S K Tomar (Scientist E)
Keywords
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- EP ID EP18272
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