STRUCTURE AND OPTICALLY PROPERTIES OF THE ZNSO LAYERS PREPARED BY THERMAL OXIDATION OF ZNS THIN FILMS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 2
Abstract
We have grown ZnS thin films by means of the radiofrequency (RF) magnetron sputtering technique onto c-Al2O3 and Si substrates at a temperature of 300°С. An effect of thermal annealing on air in a temperature range from 450°С to 800°С on the properties of the deposited films was studied and discussed. It was found that the annealing of the ZnS films leads to a formation both ZnSО layers with different sulfur/oxygen content and pure ZnО layers. It is evidenced by XRD data and optical transmission measurements. An analysis of the optical transmission spectra allowed determining a dependence of the band-gap energy of the films on the conditions of the thermal oxidations on air.
Authors and Affiliations
V. V. Khomyak
Keywords
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- EP ID EP399967
- DOI 10.18524/1815-7459.2018.2.136890
- Views 48
- Downloads 0
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