Structure and Transport Phenomena in Condensed Structures SnTe:Bi on Sital
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3
Abstract
The influence of the thickness pure and bismuth doped tin telluride films deposited on sital substrates for their nanostructure and scattering mechanisms of charge carrier are researched. Established that the dominant scattering mechanism is surface scattering and scattering on the intergrain boundaries which determined by the dopant content. Crystal chemistry doping mechanisms which associated with placement of Bi atoms in cationic structures are proposed.
Authors and Affiliations
D. M. Freik, B. S. Dzundza, V. I. Makovyshyn, I. A. Arsenyuk, O. Yu. Kal’ka
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