Study of Electrokinetic and Magnetic Properties of ZrNi1-xRhxSn Semiconductive Solid Solution
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 1
Abstract
The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the range: T = 80 - 400 K, x = 0 - 0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects with acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band D2 was formed.
Authors and Affiliations
L. P. Romaka, Yu. V. Stadnyk, V. A. Romaka, A. M. Нoryn, V. Ya. Krayovskyy
Keywords
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- DOI 10.15330/pcss.19.1.21-28
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