Studying the mechanical properties of (Cu1–xAgx)7GeS5I mixed crystals by using the micro-indentation method
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 3
Abstract
(Cu1–xAgx)7GeS5I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were investigated. The measurements of mechanical parameters were performed at the room temperature by using the micro-indentation method. Variations of the hardness of (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were interpreted in the framework of the deformation gradient model. The influence of cation Cu→Ag substitution on mechanical parameters of (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals was studied.
Authors and Affiliations
V. V. Bilanych
Analysis of the silicon solar cells efficiency. Type of doping and level optimization
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombin...
Electronic structure of Ag8GeS6
For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-...
Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
We calculated the dependence of effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids on the diameter of the cone base, the side of the pyramid base, the height of cone and pyramid....
Electrical and dielectrical properties of composites based on (Ag1–xCux)7GeS5I mixed crystals
Polymer composites were prepared from (Ag 1–x Cu x ) 7 GeS 5 I mixed crystals grown using Bridgman–Stockbarger method. The impedance measurements were performed at room temperature in the frequency range 10 –3 –2·10 6 Hz...
On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hm of the Cd1–xZnxTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A0 or shallo...