The Defects Modeling in ZnSe Crystals with Isovalent Mg Impurity
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 3
Abstract
The calculation of equilibrium defects concentration in ZnSe crystals, doped with Mg isovalent impurity, is performed by quasichemistry reaction method. It is shown, that single charged vacancies of zinc, selenium and interstitial selenium dominate. The holes condyctivity remains at doping temperature chandes for 373-1273 K ranges and holes concentration increases at decreasing and inputted Mg concentration increasing.
Authors and Affiliations
V. P. Makhniy, I. V. Tkachenko, A. I. Chernyh, M. F. Pavlyuk
Keywords
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