The Influence of Nanodispersed Silver/Alumina Addition on the Rheological Properties of Melts and Phase Transitions in Polypropylene/Copolyamide Blends
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
There is concentration influence of nanodispersed silver/alumina addition combined on appropriatenesses of polypropylene/copoliamide mixture melt flow studied. There are dependences of swelling and viscosity from Ag/Al2O3 concentration of extremal nature: the minimal viscosity and maximal elasticity are characteristic both for blend, containing 0.05% mass. of addition. It is shown, using DTA technique, that addition in low temperature range having positive influence on crystal structure forming of composite extrudates. It is founded, that silver in initial position distributed, mainly, in the cluster and nanoparticles (up to 20 nm) forms, and, mainly, in the extrudates of treble blends, as nanoparticle form. Mainly, the silver in polypropylene microfibers removed from treble extrudates, in cluster form founded. There is presence of silver in polypropylene microfibers, which is important for creation of bactericidal thin-fibrous filters.
Authors and Affiliations
L. S. Dzubenko, O. O. Sapyanenko, P. P. Gorbyk, T. O. Tsebrenko, N. M. Rezanova, I. A. Mel’nyk
Features of the Structural, Energetic and Kinetic Properties HfNi1-xRuxSn Solid Solution
The crystal and electronic structure, energy and kinetic properties of semiconducting HfNi1-xRuxSn solid solution in the ranges : T = 80÷400 K, ≈ 9,5•1019 см-3 (х = 0,005) ÷ 5,7•1020 см-3 (х = 0,03), was investigated. Th...
Compensation Effect in the Kinetics of the Cd1-xMnxTe Solid Solution Chemical Etching
The kinetics of the chemical dynamic polishing of CdTe and Cd1-xMnxTe (0,04< х <0,5) using iodine containing (I2–HI) and iodine emerging etchants based on Н2О2–НІ and the temperature dependence of the chemical dissolutio...
Схемотопологічне моделювання перетворювачів рівнів сигналів для аналітичних мікросистем-на-кристалі
В роботі наведено результати схемотопологічного проектування і комп’ютерного моделювання перетворювачів рівнів сигналу для інтегральних схем та аналітичних мікросистем на базовому матричному кристалі (БМК) зі структурами...
Graded-Gap Technology Formatting of High-Speed GaAs – Transistor Structures as the Basis for Modern of Large Integrated Circuits
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work. Power consumption is reduced too. Formation of large in...
Investigation of Thermodynamic Properties in ZnTe, ZnSe, ZnS Crystals using ab initio Calculations
Using cluster models for cubic sphalerite for stoichiometric ZnX, X = S, Se, Te crystal was spent calculation of values of thermodynamic parameters under normal conditions, and was defined the analytical expressions of t...