Transport Phenomena in thin Films of SnTe Doped Stibium
Journal Title: Фізика і хімія твердого тіла - Year 2015, Vol 16, Issue 3
Abstract
The influence of the thickness of thin films based on compounds SnTe: Sb, deposited on Sital substrates at their structure and mechanisms of carrier scattering are researched. The dominant role of scattering on the surface due to the increasing size of nanocrystals with increasing of thickness vapor-phase structures are defined.
Authors and Affiliations
B. S. Dzundza, Oksana Kostyuk, V. I. Makovyshyn, A. І. Tkachuk
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