ZnTe-based UV sensors
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTe-based UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasi-closed space condensation. A transparent current collecting electrode for the surface-barrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu1.8S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.
Authors and Affiliations
S. Yu. Pavelets, Yu. N. Bobrenko, T. V. Semikina, G. I. Sheremetova, B. S. Аtdaiev, K. B. Krulikovska, M. A. Маzin
Keywords
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- EP ID EP178129
- DOI 10.15407/spqeo19.02.197
- Views 111
- Downloads 0
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