Zone diagram formation of photon and phonon crystals
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2015, Vol 0, Issue 63
Abstract
Inroduction. Photon and phonon crystals are crystal structures, which just like the crystals, are characterized by zone spectral properties. The purpose of the article is to research the input impedance characteristics and formation features of the photon and phonon crystals’ zone diagrams. Impedance model and properties of unlimited crystal structure. The expressions for input impedance of unlimited one-dimensional crystal structure for waves of different nature are presented. The relationships of physical properties of the crystal structure and the mathematical features of the expressions are investigated. Impedance characteristics of photon and phonon unlimited crystals. The dependences of active and reactive components of photon and phonon unlimited crystal’s input impedance with layers of different thickness are shown. Input impedance characteristics of photon and phonon limited crystals. The dependences of active and reactive components of limited photon and phonon crystal’s input impedance are given. The conditions for waves resonant passing through photon and phonon crystals are obtained. Reflection coefficient characteristics of photon and phonon crystals. The formation of the limited photon and phonon crystal’s zone diagrams is analyzed by mutual comparison of limited photon and phonon crystal’s reflection characteristic and active component of unlimited photon and phonon crystal’s input impedance characteristics. The approximation degree of limited photon and phonon crystal’s zone diagram parameters to the unlimited photon and phonon crystal’s zone diagram parameters is quantitatively analyzed. Conclusions. The conditions for waves resonant passing through photon and phonon crystals is formulated and features of photon and phonon crystal’s zone diagram formation is investigated.
Authors and Affiliations
M. Hindikina, Ya. Zinher, E. Nelin
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