DEVELOPMENT OF MATHEMATICAL MODEL OF CONTACT METAL-POROUS GALLIUM ARSENIDE WITH A SCHOTTKY BARRIER
Journal Title: Вісник Кременчуцького національного університету імені Михайла Остроградського - Year 2018, Vol 1, Issue 111
Abstract
Purpose. Recently, a technology based on porous gallium arsenide (porous GaAs) has been developed. The essence of this technology lies in the creation of a porous film by electrochemical etching on a n-type GaAs substrate. A special place in the creation of metal contacts to semiconductors is occupied by contacts with the Schottky barrier. This issue is especially acute when porous GaAs is used as a semiconductor layer. These contacts are widely used in the manufacture of gas sensors on porous GaAs. The development of a mathematical model of metal-porous gallium arsenide contact with a Schottky barrier will make it possible to predict the electrical parameters of the contacts when the structure of the porous layer on the GaAs structure changes. Methodology. To analyze the contact resistance of the metal contact - porous GaAs structure, we apply the transfer method (Transmission Line Method - TLM), which is based on the change of full impedance relative to the contact spacing. To calculate these parameters, a program was used to calculate the height of the barrier, the ideality factor, and the value of the series resistance from the current-voltage characteristics. Results. The paper shows that the contact resistance of a metal to porous gallium arsenide is determined by the height of the Schottky barrier. A change of porosity of the porous – GaAs film leads to a change of the contact resistance. It is shown that the total resistance of metal porous – GaAs can be considered as a system of parallel-series-connected resistances. Originality. The paper shows that the contact resistance of a metal to porous gallium arsenide is determined by the height of the Schottky barrier. A change in the porous – GaAs film porosity leads to a change in the contact resistance. For the first time, a mathematical model describing dependency of total resistance of the metal contact – porous gallium arsenide – gallium arsenide substrate system on the porous film was developed. It was shown that the total resistance increases with increasing thickness of the porous film. The assessment of the adequacy of the proposed model showed the correspondence between the results of modeling of the total resistance and the experimental data at the level of 20%. The practical value. The proposed method will improve the quality produced by por-GaAs, which is used in the manufacture of various gas sensors.
Authors and Affiliations
А. Oksanich, S. Pritchin, М. Kogdas
Keywords
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- EP ID EP660296
- DOI 10.30929/1995-0519.2018.4.49-55
- Views 78
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