Dielectric spectroscopy of CuInSe2 single crystals
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
The results of high-frequency dielectric measurements with obtained α-CuInSe2 single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps responsible for hopping conductivity in alternate electric fields.
Authors and Affiliations
S. N. Mustafaeva, S. M. Asadov, D. T. Guseinov, I. Kasimoglu
Keywords
Related Articles
- EP ID EP178131
- DOI 10.15407/spqeo19.02.201
- Views 93
- Downloads 0
The influence of the guest cavitations loading degree in fractal nanohybrids GaSe<β-cyclodextrin<FeSO4>> on the current passing and polarization processes. The giant “battery spin” effect at room temperature.
The investigation results of clathrate properties GaSeβ-cyclodextrinFeSO4 of the hierarchical architecture with the fourfold expansion at different degrees of a guest cavitations loading have been presented. Based on...
Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes
The influence of non-radiative exciton recombination (NRER) on the photoconversion efficiency in silicon solar cells with short Shockley–Read–Hall lifetimes τSRH has been studied. It has been shown that the efficiency re...
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V2O3 phase inclusions...
Dielectric spectroscopy of CuInSe2 single crystals
The results of high-frequency dielectric measurements with obtained α-CuInSe2 single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the densit...
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
The main difficulty in obtaining the lateral elemental composition distribution maps of the semiconductor nanostructures by Scanning Auger Microscopy is the thermal drift of the analyzed area, arising from its local heat...