Growth and optical properties of Er3+-doped BaGd2(MoO4)4 crystal
Journal Title: CHEMIK nauka-technika-rynek - Year 2013, Vol 67, Issue 9
Abstract
A 1 at% Er3+ doped BaGd2(MoO4)4 single crystal was grown by the Czochralski method. Details on the preparation and growth procedures were discussed. The crystal has a perfect (010) cleavage plane, and the cleavage character makes the crystal suitable as a gain medium for microchip lasers. The absorption spectrum in the visible and near-infrared (NIR) regions was measured at room temperature. There are several strong absorption peaks in the range from 380 to 1600 nm. The fluorescence spectrum excited by a Xenon lamp was also measured. A strong NIR emission peak located at 1536 nm was observed. The fluorescence lifetimes of 4I13/2 and 4I11/2 determined by a fit to a single exponential are around 5.85 ms and 112.62 μs, respectively. The specific heat of Er3+:BaGd2(MoO4)4 at 25°C is 0.471 J g-1 K-1. Using the measured spectra, the optical parameters were calculated using the J–O theory.
Authors and Affiliations
Shujuan Han, Jiyang Wang, Huaijin Zhang, Shilie Pan, Honghao Xv, Yicheng Wang, Chuanying Shen
Keywords
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