Investigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 2
Abstract
The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level εF, obtained from the band structure calculations is in agreement with experimental extracted from lnρ(1/T) dependencies. It is shown that with substitution of Sn (5s25p2) with Ga (4s24p1) atoms in 4b crystallographic site both acceptor and donor (vacancies in 4b site) defects are generated.
Authors and Affiliations
L. P. Romaka, Yu. V. Stadnyk, V. V. Romaka, V. Ya. Krayovskyy, P. -F. Rogl, A. M. Horyn
Keywords
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- EP ID EP264084
- DOI 10.15330/pcss.18.2.187-193
- Views 70
- Downloads 0
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