Vapor Phase Condensation for Photovoltaic CdTe Films
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 4
Abstract
Thin films of CdTe were obtained by vapor phase condensation, namely by open vacuum evaporation, using different technological factors, in particular, different thickness (different time of deposition t) d = (540 -2835) nm, deposition temperature Td = 200°C and evaporator temperature Te (500 - 600)°C. The films were deposited on silicon substrates. The morphology of thin film condensates is determined on the basis of ASM and SEM studies analysis. Were received dependences of avarage roughness and root mean square roughness from the material of substrate and film thickness. It was established that the growth of surface nanostructures is determined by Strankі-Krastanov mechanism.
Authors and Affiliations
R. S. Yavorskyi, Z. R. Zapukhlyak, Ya. S. Yavorskyi, L. I. Nykyruy
Keywords
Related Articles
- EP ID EP264124
- DOI 10.15330/pcss.18.4.416
- Views 63
- Downloads 0
Energy of Substitution of Anions and Cations in Zinc and Cadmium Telluride
Energy substitution of cations and anions in ZnTe i CdTe by atoms from first and seventh group of the periodic table were calculated using the method of bonding orbitals. Based on the results conclusions about the most l...
Compensation Effect in the Kinetics of the Cd1-xMnxTe Solid Solution Chemical Etching
The kinetics of the chemical dynamic polishing of CdTe and Cd1-xMnxTe (0,04< х <0,5) using iodine containing (I2–HI) and iodine emerging etchants based on Н2О2–НІ and the temperature dependence of the chemical dissolutio...
Effect of pH of the Reaction Mediumon the Structure and Properties of Spinel-Type Ferrite Nanopowder
In this work using sol-gel auto-combustion synthesis was synthesised single-phase magnesium-substituted lithium ferrite at different pH reaction medium. The synthesized materials were investigated by X-ray and Mossbauer...
Temperature Dependence of the Refractive Index of Vitreous Alloys of the Ag-As-S System
The temperature coefficient of refractive index dn/dT is determined for glassy allous of the system along the(Ag2S)x(As2S3)100-x, direction (0 < x <20) in the spectral interval of 1–5 μm at temperature of 77– 400 K thegl...
The Defects Modeling in ZnSe Crystals with Isovalent Mg Impurity
The calculation of equilibrium defects concentration in ZnSe crystals, doped with Mg isovalent impurity, is performed by quasichemistry reaction method. It is shown, that single charged vacancies of zinc, selenium and in...