Photoconductivity relaxation and electron transport in macroporous silicon structures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.
Authors and Affiliations
L. A. Karachevtseva, V. F. Onyshchenko, A. V. Sachenko
Keywords
Related Articles
- EP ID EP265335
- DOI 10.15407/spqeo20.04.475
- Views 89
- Downloads 0
Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
ombined mechanical scanning probe lithography (SPL) approach applied for the direct mask-less modification of graphene oxide (GO) flakes and the mask patterns engraving in layers of chalcogenide resist with a nanometer s...
Optical studies of as-deposited and annealed Cu7GeS5I thin films
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the te...
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics...
Ellipsometry and optical spectroscopy of low-dimensional family TMDs
Here, we report a comprehensive study of fundamental optical properties of two-dimensional materials. These properties have been ascertained using spectroscopic ellipsometry, optical spectroscopy of Raman scattering, and...
Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals
The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in -irradiated sam...