Self-Consistent Calculation of Potential Profile of GaN/AlN Resonace Tunnelling Structures

Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 3

Abstract

For resonant tunneling structure with GaN – potential wells and AlN – potential barriers, calculation of internal fields caused by piezoelectric and spontaneous polarization was carried. In the model the effective mass of an electron and a dielectric continuum model using finite difference method self-consistent solutions of the Schrödinger and Poisson system of equations taking into account the contribution of piezoelectric and spontaneous polarizations was found. Based on the found solutions of the Schrödinger and Poisson system of equations for resonance tunneling structure, which functioned as a cascade experimentally realized a quantum cascade detector, calculation of the potential profile and the electron energy spectrum was carried. It was found, that calculated value of detected energy is different from the experimentally obtained not more than 3 %.

Authors and Affiliations

I. V. Boyko, M. V. Tkach, Ju. O. Seti

Keywords

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  • EP ID EP263213
  • DOI 10.15330/pcss.18.3.288-296
  • Views 75
  • Downloads 0

How To Cite

I. V. Boyko, M. V. Tkach, Ju. O. Seti (2017). Self-Consistent Calculation of Potential Profile of GaN/AlN Resonace Tunnelling Structures. Фізика і хімія твердого тіла, 18(3), 288-296. https://europub.co.uk./articles/-A-263213