Self-organization in irradiated semiconductor crystals caused by thermal annealing
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 2
Abstract
Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (conductivity σ, carrier concentration n and mobility µ) as well as the positron life-time τ were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.
Authors and Affiliations
M. ZAVADA
Keywords
Related Articles
- EP ID EP415982
- DOI 10.15407/spqeo21.02.130
- Views 76
- Downloads 0
Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles
The influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range 101…106 Hz and at the tempera...
Electronic properties of graphene/ZnO 2D-2D composite
Within the framework of methods of the electron density functional and the ab initio pseudopotential, we have obtained the spatial distributions of the valence electrons density, the electron energy spectra and the Coulo...
Effective polycrystalline sensor of ultraviolet radiation
Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrea...
The non-linear dependence of 6СНВТ liquid crystal conductivity on the concentration of gold nanoparticles
Within the frequency range 10–1…106 Hz at the temperature 293 K, the effect of gold nanoparticles on the dielectric properties of the planar-oriented nematic liquid crystal 6СНВТ has been studied. The concentration of na...
Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The depe...