Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation was experimentally evaluated and analyzed. As sources of excitation pulse laser radiation with the pulses duration equal to 20 ns and 150 s and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with duration equal to 20 ns was shown. The spatial and temporal distributions of laser induced temperature rise was calculated to interpret experimental results.
Authors and Affiliations
V. B. Neimash, V. V. Melnyk, L. L. Fedorenko, P. Ye. Shepeliavyi, A. S. Nikolayenko, M. V. Isaiev, A. G. Kuzmich
Keywords
Related Articles
- EP ID EP265205
- DOI 10.15407/spqeo20.04.396
- Views 79
- Downloads 0
Photoconductivity relaxation and electron transport in macroporous silicon structures
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport t...
The non-linear dependence of 6СНВТ liquid crystal conductivity on the concentration of gold nanoparticles
Within the frequency range 10–1…106 Hz at the temperature 293 K, the effect of gold nanoparticles on the dielectric properties of the planar-oriented nematic liquid crystal 6СНВТ has been studied. The concentration of na...
Electrical and optical parameters of Cu6PS5I-based thin films deposited using magnetron sputtering
Cu6PS5I-based thin films were deposited onto silicate glass substrates by non-reactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscop...
Optical studies of as-deposited and annealed Cu7GeS5I thin films
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the te...
Electrical and dielectrical properties of composites based on (Ag1–xCux)7GeS5I mixed crystals
Polymer composites were prepared from (Ag 1–x Cu x ) 7 GeS 5 I mixed crystals grown using Bridgman–Stockbarger method. The impedance measurements were performed at room temperature in the frequency range 10 –3 –2·10 6 Hz...