STRUCTURAL PROPERTIES OF POROUS SILICON RECEIVED BY ELECTRIC CHEMICAL CONTROL METHOD
Journal Title: Вісник Кременчуцького національного університету імені Михайла Остроградського - Year 2017, Vol 1, Issue 103
Abstract
Purpose. To investigate the change in PS morphology, to investigate the formation of pores and ‘‘porous silicon’’ for a wide spectrum of potential applications since the discovery of the unexpected optical properties of microporous Si in 1990. Methodology. For this reason, it has been decided that the present study should be performed using a current density of 30 mA cm-2. Discussions on how other properties such as the PS thickness, pore diameter, pore density, porosity and surface roughness are influenced by the etching time are also presented. Finally, these properties are related to the electrical characteristics of the obtained PS. Results. The scientific data on the porosity of the PC have been specified and it has been established that the pore diameter and the distance between the pores remain practically unchanged while the porosity increases with increasing etching time. Originality. It has been found out that with increasing etching time, the porosity increases from 25% to 70%, and the film thickness increases from 20 to 45 μm. The practical value. The proposed method will improve the quality produced by por-Si, which is used in the manufacture of various gas sensors.
Authors and Affiliations
А. Oksanich, М. Kogdas, V. Chebenko
Keywords
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