The Importance of Modulators for the Usable Field in Fibre-Optics at Microwave Frequencies Journal title: International Journal of Research in Computer and Communication Technology Authors: Mohammad Arifin Rahman Khan, Md. Sadiq Iqbal Subject(s): Computer and Information Science, Telecommunications
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: A. V. Fomin, G. A. Pashchenko, M. Yu. Kravetskyi, I. G. Lutsyshyn Subject(s):
Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits Journal title: Фізика і хімія твердого тіла Authors: S. P. Novosyadlyj Novosyadlyj, S. I. Boyko Subject(s):
Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS Journal title: Фізика і хімія твердого тіла Authors: S.P. Novosyadlyi, V.S. Huzik Subject(s):
Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics Journal title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування Authors: A. Oksanich, S. Pritchin, V. Terban Subject(s):
Models Semiinsulating Layers of Gallium Arsenide in Their Formation of Multiply Charged Ion Implantation Journal title: Фізика і хімія твердого тіла Authors: S.P. Novosyadlyy, S.M. Marchuk, V.M. Varvaruk, L.V. Melnyk Subject(s):
Study of Hall Effect Sensor and Variety of Temperature Related Sensitivity Journal title: Journal of Engineering and Technological Sciences Authors: Awadia Ahmed Ali, Guo Yanling, Chang Zifan Subject(s):
An Outline for Economical and Technical Analysis of Solar Panels for Agricultural uses: A Case Study on Texas Weather Conditions Journal title: Journal of Experimental Agriculture International Authors: David Lacey, Jersson Placido, Sergio Capareda Subject(s):
Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit Journal title: Фізика і хімія твердого тіла Authors: S.P. Novosyadlyi, V.I. Mandzyuk, N.T. Humeniuk, І.Z. Huk Subject(s):
Features of electrochemical processes at the boundary p-GaAs–HF water solution Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: G.A. Pashchenko Subject(s):
GaN CLUSTERS OBTAINED BY THE METHOD OF RADICAL-BEAM EPITAXY ON POROUS GaAs Journal title: ЕЛЕМЕНТИ, ПРИЛАДИ ТА СИСТЕМИ В ЕЛЕКТРОНІЦІ Authors: S.V. SIMCHENKO, І.В. РОГОЗІН, M.M. KAYKI Subject(s):
FEATURES OF THE FORMATION OF SCHOTTKY FIELD TRANSISTORS WITH A SELF-CONDENSED GATE ON THE BASIS OF NITRIDE AND TUNGSTEN SILICIDE Journal title: Международный научный журнал "Интернаука" Authors: Stepan Novosjadly, Nasar Humemjuk Subject(s):
FORMATION OF THE MECHANISM OF PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL SEMICONDUCTOR IN PHOTODIODIC AND PHOTOVOLTATIC MODE Journal title: World Journal of Engineering Research and Technology Authors: Feruza Giyasova Subject(s):
